Bhubaneswar: In a major push toward strengthening the regional high-tech industrial footprint, Additional Chief Secretary,Energy and E&IT, Shri Vishal Dev, along with senior government officials, visited and witnessed the operational readiness of RIR Power Electronics Limited’s Silicon Carbide (SiC) semiconductor facility in Bhubaneswar on September 16, 2026.
During the visit, ACS Shri Vishal Dev reviewed the completion of the erection and installation of state-of-the-art SiC Epitaxial Wafer Manufacturing Reactors at the plant. Emphasizing the state’s strategic alignment with national technological goals, he noted that the achievement reflects the growing role of Odisha in the semiconductor ecosystem of India and aligns with the national vision of Viksit Bharat. He expressed pride in RIR Power Electronics selecting Odisha for setting up the country’s first vertically integrated SiC semiconductor facility, reiterating the commitment of the State Government to provide continuous support to foster a self-reliant industrial environment.
The facility forms a central component of a phased total investment of Rs 618 crore by RIR Power Electronics. The unit is designed to follow a Silicon Carbide to System manufacturing framework, where the SiC Epitaxial process serves as the foundational stage for developing advanced power semiconductor devices such as MOSFETs, diodes, and modules. The key reactors, power connections, utilities, and associated supporting infrastructure have been fully commissioned. Commercial operations are slated to commence once remaining statutory and regulatory formalities are concluded.
Silicon Carbide technology offers higher thermal limits, better switching efficiency, and reduced energy losses compared to conventional silicon chips. The output from this facility will address key components needed across electric vehicles, renewable energy storage, defense, aerospace, and data centers, positioning Odisha as a crucial node in domestic and international electronics supply chains.